Kr (5N)
- ≥ 99.999% (5N)
- 49L
- 10M3
Chemical name : Krypton
Chemical formula : Kr (SDS)
CAS.NO: 7439-90-9
MW : 83.8 g/mol
Melting point : -157.2 ℃
Boiling point : -152.9 ℃
Krypton (Kr) is a versatile and important gas in semiconductor manufacturing, with key applications in plasma etching, ion implantation, thin film deposition, photolithography, and plasma cleaning. Its inert properties and ability to form heavy ions make it suitable for precise etching, implantation, and film deposition processes. Additionally, krypton lamps and excimer lasers are widely used in photolithography, enabling the production of smaller, more complex semiconductor features. Krypton's unique characteristics contribute to the efficiency, precision, and quality of semiconductor manufacturing, playing a crucial role in the development of advanced semiconductor devices.